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Structural Analysis(tem) - List of Manufacturers, Suppliers, Companies and Products

Last Updated： Aggregation Period:Sep 03, 2025～Sep 30, 2025
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Structural Analysis Product List

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Technical Information Magazine 201904-02 Cellulose Nanofiber Structural Analysis

Technical Information Magazine 201904-02 Cellulose Nanofiber Structural Analysis

The technical information magazine The TRC News provides the latest information on analytical techniques that are useful for research and development, solving production troubles, and quality control.

**Abstract** In the research and development of CNF, the use of electron microscopy for observation has become a necessary evaluation across almost all material fields and research phases. Particularly for observing CNF dispersed in polymers using TEM, it is essential to employ the technique of "electron staining," which has been crucial for preparing TEM samples of polymer materials. In this presentation, we will introduce examples of morphological observations of composite materials using CNF, as well as observation cases of the CNF itself, structural analysis examples such as crystallinity measured by 13C solid-state NMR, and examples of compositional sugar analysis using acid hydrolysis HPLC-fluorescence detection. **Table of Contents** 1. Introduction 2. Overview of Morphological Observation 3. Observation Cases of CNF and CNF/Polymer 4. Evaluation of CNF Crystallinity 5. Compositional Sugar Analysis of CNF (HPLC-Fluorescence Detection) 6. Conclusion

  • Contract Analysis
  • Contract measurement
  • Technical and Reference Books

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Structural analysis of nanomaterials

Structural analysis of nanomaterials

We offer contract services for structural analysis and morphological observation at the nanoscale.

We offer contract services for structural analysis and morphological observation of nanomaterials such as nanotubes using TEM, SEM, and EDS in the nanoscale region.

  • Contract measurement

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Panasonic ReRAM 8-bit microcontroller structural analysis

Panasonic ReRAM 8-bit microcontroller structural analysis

Panasonic ReRAM-equipped MN101LR05D 8-bit microcontroller

The MN101LR05D is a low-power 8-bit single-chip microcontroller developed for portable healthcare, security devices, and sensor processing. The MN101LR05D features a CPU core with a 10MHz 8-bit AM13L, 64KB of ReRAM capacity, and 4KB of SRAM capacity. The MR101LR05D is the world's first mass-produced practical example of ReRAM (Resistive RAM), and it is expected to be widely utilized as a successor technology to existing non-volatile memory. The MN101LR05D is manufactured using a 180nm CMOS process with four layers of AI metallization. The ReRAM cell of this metal oxide is formed between stack W vias connecting metal 3 to metal 4. The results of the report are based on data from scanning electron microscopy (SEM), transmission electron microscopy (TEM), energy-dispersive X-ray analysis (TEM-EDS), electron energy loss spectroscopy (TEM-EEKS), and spreading resistance measurement (SRP).

  • Other electronic parts

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100V GaN transistor structure analysis, process analysis report

100V GaN transistor structure analysis, process analysis report

Structural and process analysis of GaN Systems' GaN power transistor "GS61008T-E01-MR"!

We provide the "Structural Analysis and Process Analysis Report for GaN Systems 100V GaN Transistor (GS61008T-E01-MR)." The structural analysis report clarifies the details of the GaN power transistor "GS61008T-E01-MR" from GaN Systems, while the process flow analysis report estimates the chip manufacturing process based on the results of the structural analysis. [Report Contents] ■ Structural Analysis Report - Package appearance, X-ray observation, chip plane analysis (wire connections, layout confirmation), chip cross-section analysis (GaN transistor, chip edge), GaN-Epi layer TEM-EDX analysis - Electrical characteristic measurements (Id-Vd, BVdss, capacitance characteristics) ■ Process Analysis Report - Extraction and estimation of manufacturing process flow, number of masks, process sequence cross-sectional diagram - Correlation analysis between electrical characteristics and device structure *For more details, please download the PDF or feel free to contact us.

  • Other services

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Technical Information Magazine 202001-02 Crystal Structure Analysis of Gallium Oxide

Technical Information Magazine 202001-02 Crystal Structure Analysis of Gallium Oxide

The technical information magazine The TRC News provides the latest information on analytical techniques that are useful for research and development, solving production troubles, and quality control.

**Abstract** Gallium oxide (Ga2O3) is attracting attention as a next-generation power semiconductor material, and research has been actively conducted in recent years. Optimizing process technology is essential for improving the reliability and characteristics of semiconductor devices, making the evaluation methods crucial. This paper presents examples of crystal structure analysis necessary for assessing the quality of epitaxial films, as well as the analysis of impurities, defects, and carrier concentration in the ion implantation process, which significantly impacts device characteristics. **Table of Contents** 1. Introduction 2. Crystal structure analysis using cross-sectional TEM and planar STEM 3. Evaluation of the ion implantation process 4. Conclusion

  • Contract Analysis
  • Contract measurement
  • Technical and Reference Books

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[Analysis Case] Local Crystal Structure Analysis of IGZO Film

[Analysis Case] Local Crystal Structure Analysis of IGZO Film

Continuous evaluation of crystallinity and orientation using electron diffraction.

IGZO films are materials that are being researched and developed as TFT materials for displays. The presence or absence of crystalline structure in the thin film may affect the TFT characteristics and reliability, necessitating local crystalline evaluation within the device. We will introduce a case where the crystalline structure in IGZO films was continuously evaluated using electron diffraction measurements from TEM.

  • Contract Analysis
  • Contract Inspection

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IC failure analysis

IC failure analysis

By combining various methods suitable for failure modes, we can consistently address everything from the identification of defective nodes to physical analysis.

We would like to introduce Aites Inc.'s "Defect Analysis of ICs." Our company provides a comprehensive approach to ICs by combining methods suitable for various defect modes, from identifying defective nodes to physical analysis. We offer various analysis techniques, including "Light Emission Analysis/OBIRCH Analysis," which allows layout verification using a Layout Viewer, as well as "Layer Delamination/Sample Processing," "PVC Analysis," "Diffusion Layer Etching," and "sMIM Analysis." 【Methods】 ■ Light Emission Analysis/OBIRCH Analysis ■ Layer Delamination/Sample Processing ■ Microprobe ■ PVC Analysis ■ EBAC Analysis ■ Physical Analysis (FIB-SEM, TEM) *For more details, please refer to the PDF document or feel free to contact us.

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  • Other analyses
  • Contract Analysis
  • Analysis Services

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Analysis of defective connector terminal contacts with Au plating【STEM/EDS】

Analysis of defective connector terminal contacts with Au plating【STEM/EDS】

It can be confirmed without loss by the "sampling method that protects the surface" of the adhered layer (approximately 20nm) on the surface of the connector terminal plated with STEM.

In STEM (Scanning Transmission Electron Microscopy) and EDS (Energy Dispersive X-ray Spectroscopy), information about the composition of the sample (contrast images reflecting atomic numbers) can be obtained by scanning a finely focused electron beam over the sample. The following features are also available: - Observation of changes in diffraction contrast by varying the angle of incidence of the electron beam - Determination of whether the observation target is crystalline - Acquisition of information about crystal defects (dislocations, twins, etc.) within the crystal In this case, we will introduce "Failure Analysis of Au-Plated Connector Terminal Contacts Using STEM." Please take a moment to read the PDF materials. Additionally, our company conducts various cross-sectional analyses using not only STEM but also TEM and SEM. We would be happy to assist you, so please feel free to reach out. Seiko Future Creation Official Website https://www.seiko-sfc.co.jp/ *Other materials are also available. If you request them through the inquiry button, we will send them to you.

  • Plating Equipment
  • Contract Analysis
  • Other metal materials

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Evaluation of semiconductor insulating films using STEM/EDS.

Evaluation of semiconductor insulating films using STEM/EDS.

STEM-EDS observation can confirm the shape and layer structure of the insulating film between semiconductor Poly-Si (polysilicon) and can be applied to investigate the causes of semiconductor defects.

In STEM (Scanning Transmission Electron Microscopy) and EDS (Energy Dispersive X-ray Spectroscopy), information regarding the composition of the sample (contrast images reflecting atomic numbers) can be obtained by scanning a finely focused electron beam over the sample. Additionally, the following features are available: - Observation of changes in diffraction contrast by varying the angle of incidence of the electron beam - Determination of whether the observation target is crystalline - Acquisition of information on crystal defects (dislocations, twins, etc.) within the crystal In this case, we introduce "Evaluation of Semiconductor Insulating Films using STEM-EDS." This case yielded no issues, but abnormal detection is also possible. Please take a moment to read the PDF materials. Furthermore, in addition to this STEM, our company excels in identifying defective areas by performing 3D reconstruction on specific regions of the sample in combination with FIB. We would be happy to provide a demonstration, so please feel free to reach out to us. Seiko Future Creation Official Website https://www.seiko-sfc.co.jp/ *Other materials are also available. If you request them through the inquiry button, we will send them to you.

  • Semiconductor inspection/test equipment
  • Contract Analysis
  • Other semiconductors

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FEM stress structural analysis

FEM stress structural analysis

We are utilizing cutting-edge systems such as 3D robot simulation and FEM stress structural analysis to improve productivity and quality.

We use HYPER MESH for FEM analysis modeling. A wide range of engineers, from skilled professionals to young talent, provide stable quality and the latest technology. You can rely on us for everything from design to simulation, analysis, and robot teaching.

  • Other industrial robots
  • Assembly Machine
  • simulator

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Business Information: Process Analysis

Business Information: Process Analysis

Research on key innovative process technologies, optimization of manufacturing costs, and improvement of yield!

The process helps determine the cost, quality, and performance of devices, and often compensates for design flaws. TechInsights employs 10 process experts and provides the collective expertise accumulated over more than 140 years in device structure analysis. Devices include but are not limited to CMOS, bipolar, BiCMOS, GaAs, SiGe, copper, low-k dielectrics, SOI, strained silicon, MEMS, and TFT. Using data collected through TechInsights' specialized technology, we provide information on the structure, material composition, critical dimensions, and manufacturing processes of your products or competing products in the form of process analysis reports. 【Example Issues Addressed】 - How to embed memory (flash, DRAM, SRAM, FeRAM) into logic devices - How to mitigate risks when transitioning to more advanced process generations - What transistor performance major competing products have - How RF devices are integrated into CMOS For more details, please contact us or download the catalog.

  • Patents

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